2N6430 PBFREE

2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation 2N6430 2N6432 200 200 2N6431 2N6433 300 UNITS V 300 V VEBO VEBO 6.0 V 5.0 V IC PD PD 500 mA 1.8 W 500 mW -65 to +200 °C Thermal Resistance TJ, Tstg ΘJA 0.35 °C/mW Thermal Resistance ΘJC 97.2 °C/W 2N6430 2N6431 MIN MAX 100 2N6432 2N6433 MIN MAX 250 Operating and Storage Junction Temperature ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25°C) TEST CONDITIONS VCB=160V (2N6430, 2N6432) VCB=200V (2N6431, 2N6433) IEBO VEB=4.0V IEBO VEB=3.0V BVCBO IC=100μA (2N6430, 2N6432) BVCBO IC=100μA (2N6431, 2N6433) BVCEO UNITS nA - 100 - 250 nA - 100 - - nA - - - 100 nA 200 - 200 - V 300 - 300 - V IC=1.0mA (2N6430, 2N6432) 200 - 200 - V BVCEO IC=1.0mA (2N6431, 2N6433) 300 - 300 - V BVEBO IE=100μA 6.0 - 5.0 - V VCE(SAT) IC=20mA, IC=20mA, IB=2.0mA - 0.5 - 0.5 V - 0.9 - 0.9 V 25 - 25 - hFE IB=2.0mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA 40 - 40 - hFE VCE=10V, IC=30mA 50 200 30 150 VBE(SAT) hFE R2 (3-April 2018) 2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL fT fT TEST CONDITIONS VCE=20V, IC=10mA, f=100MHz VCE=20V, IC=10mA, f=20MHz Cob VCB=20V, IE=0, f=1.0MHz 2N6430 2N6431 MIN MAX 50 200 2N6432 2N6433 MIN MAX - UNITS MHz - - 50 - MHz - 4.0 - 6.0 pF TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (3-April 2018) w w w. c e n t r a l s e m i . c o m 2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS NPN TYPICAL ELECTRICAL CHARACTERISTICS R2 (3-April 2018) w w w. c e n t r a l s e m i . c o m 2N6430 2N6431 2N6432 2N6433 NPN PNP COMPLEMENTARY SILICON TRANSISTORS PNP TYPICAL ELECTRICAL CHARACTERISTICS R2 (3-April 2018) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)